Anneal Induced Changes in Amorphous Semiconductor Multilayers

Crystallization and melting in metal-semiconductor multilayers.

The amorphous-to-microcrystalline phase transition of Ge in Pb/Ge multilayer geometry has been investigated as a function of layer thicknesses with the use of high-temperature x-raydiA'raction techniques. During crystallization, the modulation structure is destroyed and the Pb texture improves. In addition, the crystallization temperature decreases with decreasing amorphous Ge thickness and inc...

Diffuse X-ray scattering of amorphous multilayers

We present a new method to measure the difuse scattering of amorphous multilayers. In contrast to conventional scans, that all take place in the plane of reflection, in this out-of-plane scattering geometry the accessible range in parallel momentum transfer Qi is not limited by the sample surface. We can therefore record data continuously from

Studies of domain dynamics in amorphous Dy/Fe multilayers

Atomistic simulation of light-induced changes in hydrogenated amorphous silicon

We employ ab initio molecular dynamics to simulate the response of hydrogenated amorphous silicon (a-Si:H) to light exposure (the Staebler– Wronski effect). We obtain improved microscopic understanding of photovoltaic operation, compute the motion of H atoms, and modes of lightinduced degradation of photovoltaics. We clarify existing models of lightinduced change in a-Si:H and show that the ‘hy...

Light-induced structural changes in hydrogenated amorphous silicon

A direct ab initio calculation of network dynamics and diffusion both for the ground state and light excited state for a-Si:H was performed. In the light excited state there was observed enhanced hydrogen diffused and formation of new silicon dihydride configurations: (H-Si Si-H)2(H-Si Si-H) and SiH2. For the first time, we show the detailed dynamic pathways that arise from light induced occupa...